HOM absorber for the KEKB normal conducting cavity

Author

Takeuchi, Y. ; Akai, K. ; Akasaka, N. ; Ezura, E. ; Kageyama, T. ; Naito, F. ; Shintake, T. ; Yamazaki, Y.

Author_Institution

Nat. Lab. for High Energy Phys., Ibaraki, Japan

Volume

3

fYear

1995

fDate

1-5 May 1995

Firstpage

1797

Abstract

The HOM absorber for the normal conducting RF cavity of the KEK B-factory (KEKB) was designed. Sixteen bullet-shape sintered SiC (silicon carbide) ceramics are used for HOM absorption. The HOM power to be handled will be about 10 kW per cavity, corresponding to about 1 kW per absorber. A prototype of SiC absorber was made to verify the performance as a HOM absorber in vacuum. The high power test was carried out successfully using a pulsed klystron (f=1296 MHz). The design of the HOM absorber and the results of the high power test are discussed

Keywords

accelerator cavities; ceramics; colliding beam accelerators; electron accelerators; silicon compounds; storage rings; 10 kW; 1296 MHz; KEKB normal conducting cavity; SiC; bullet-shape sintered SiC ceramics; higher order mode absorber; pulsed klystron; silicon carbide; Absorption; Ceramics; Coaxial components; Dielectric loss measurement; Permittivity measurement; Pollution measurement; Prototypes; Seals; Silicon carbide; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Particle Accelerator Conference, 1995., Proceedings of the 1995

Conference_Location

Dallas, TX

Print_ISBN

0-7803-2934-1

Type

conf

DOI

10.1109/PAC.1995.505365

Filename

505365