DocumentCode :
1883674
Title :
A model to predict the degradation of silicon dioxide films in mos structures
Author :
Samanta, Piyas ; Sarkar, C.K.
fYear :
2005
fDate :
March 15-17, 2005
Firstpage :
11
Lastpage :
16
Keywords :
Degradation; Dielectric breakdown; Electron traps; Impact ionization; Predictive models; Semiconductor films; Silicon compounds; Thermal stresses; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Science Conference, 2005. NRSC 2005. Proceedings of the Twenty-Second National
Print_ISBN :
977-503183-4
Type :
conf
DOI :
10.1109/NRSC.2005.193981
Filename :
1502108
Link To Document :
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