DocumentCode
1883674
Title
A model to predict the degradation of silicon dioxide films in mos structures
Author
Samanta, Piyas ; Sarkar, C.K.
fYear
2005
fDate
March 15-17, 2005
Firstpage
11
Lastpage
16
Keywords
Degradation; Dielectric breakdown; Electron traps; Impact ionization; Predictive models; Semiconductor films; Silicon compounds; Thermal stresses; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 2005. NRSC 2005. Proceedings of the Twenty-Second National
Print_ISBN
977-503183-4
Type
conf
DOI
10.1109/NRSC.2005.193981
Filename
1502108
Link To Document