Electrical properties of self-assembled films of polyaniline

Summary form only given. Thin conducting films of p-type doped polyaniline/polystyrenesulfonate or DBSA salt were deposited by using the layer-by-layer self-assembly process [1]. The conductivity of asdeposited or further protonated films was studied as a function of temperature and number of layers. The field-effect, measured in a thin-film transistor structure, turned out to be n-type. The field-effect mobilities were in the range 10/sup -6/ ... (10 /sup -3/ cm/sup 2//Vs. The charge transport mechanisms are discussed and compared with those typical for bulk polyaniline. Further studies for extending the material selection to other aniline derivatives and for fabricating novel device structures are in progress.