Title :
Prediction of PIN diode reverse recovery
Author :
Wang, Yueqing ; Zhang, Qingyou ; Ying, Jianping ; Sun, Chacqun
Author_Institution :
Delta Power Electron. Center, Shanghai, China
Abstract :
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching loss. The empirical equations are deduced based on physical concepts and verified by lab measurements.
Keywords :
electromagnetic interference; p-i-n diodes; EMI; PIN diode reverse recovery; empirical equation; reverse recovery current; switching loss; Circuits; Electronics industry; Equations; Frequency; P-i-n diodes; Power electronics; Power supplies; Sun; Switches; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
Print_ISBN :
0-7803-8399-0
DOI :
10.1109/PESC.2004.1355304
