A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology

Author

Leber, P. ; Baumberger, W. ; Lang, M. ; Rieger-Motzer, M. ; Bronner, W. ; Hulsmann, A. ; Raynor, B.

Author_Institution

Fraunhofer-Inst. for Appl. Solid-State Phys., Freiburg, Germany

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

85

Lastpage

88

Abstract

A completely integrated single-chip phase-locked loop was designed using a 0.2 /spl mu/m-enhancement/depletion AlGaAs/GaAs/AlGaAs-HEMT technology. The chip contains a VCO with 15 GHz center frequency, as well as a frequency divider, a phase detector, and a loop filter. The fabricated chip size is 1.5/spl times/1.5 mm/sup 2/. The power consumption is 0.5 W using a supply voltage of 5.0 V. The lock range is approximately /spl plusmn/270 MHz. The phase noise is -100 dBc/Hz at 100 kHz and -107 dBc/Hz at 1 MHz offset from the carrier, respectively.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; phase locked loops; voltage-controlled oscillators; 0.2 micron; 0.5 W; 15 GHz; 5.0 V; AlGaAs-GaAs-AlGaAs; VCO; enhancement/depletion HEMT technology; frequency divider; integrated single-chip phase-locked loop; loop filter; phase detector; phase noise; Energy consumption; Filters; Frequency conversion; Gallium arsenide; Phase detection; Phase frequency detector; Phase locked loops; Phase noise; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567744

Filename

567744