DocumentCode
1884056
Title
What can be the optimum IGBT structure under UIS operation?
Author
Azzopardi, S. ; Vinassa, JM ; Woirgard, Eric ; Zardini, C. ; Aucouturier, J.L.
Author_Institution
IXL-CNRS, Talence, France
Volume
4
fYear
2004
fDate
2004
Firstpage
2999
Abstract
For inductive load, UIS conditions occur when the freewheeling diode in parallel with the load has just been destroyed. The energy stored in the inductor can not disappear instantaneously, hence, the associated transistor is submitted to high voltage and high current simultaneously. Based on previous studies, we analyze and try to sum up what can be the optimum IGBT structure for UIS operation. The influence of the device voltage rating, the buffer layer (punch-through and non punch-through) and the carrier lifetime (fast and ultra fast) are investigated by the help of intensive measurements. Simulation results allow pointing out the main drawback of the punch-through structure.
Keywords
diodes; inductors; insulated gate bipolar transistors; switching; IGBT structure; UIS operation; freewheeling diode; inductive load; punch-through structure; transistor; Buffer layers; Charge carrier lifetime; Circuit simulation; Circuit testing; Diodes; Inductors; Insulated gate bipolar transistors; Switching loss; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355312
Filename
1355312
Link To Document