High-power, high-efficiency K-band AlGaAs/GaAs heterojunction bipolar transistors

Author

Hin-Fai Chau ; Hill, D. ; Yarborough, R. ; Tae Kim

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

95

Lastpage

98

Abstract

We report on the state-of-the-art power performance of AlGaAs/GaAs HBTs at K-band. A prematched 12/spl times/(1.6/spl times/25) /spl mu/m/sup 2/ HBT unit cell exhibited 1.18 W CW output power (3.93 W/mm output power density) and 57.1% power-added efficiency with 6.6 dB associated gain at 20 GHz at a collector bias of 10.5 V. Peak power-added efficiency achieved was 57.8% at an output power level of 1.08 W. No intentional harmonic tuning was applied.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1.08 to 1.18 W; 10.5 V; 20 GHz; 57.1 to 57.8 percent; 6.6 dB; AlGaAs-GaAs; AlGaAs/GaAs HBTs; K-band; heterojunction bipolar transistors; high-efficiency HBT; high-power operation; Fingers; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; K-band; PHEMTs; Power generation; Power system reliability; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567747

Filename

567747