Title :
A 3.6-W 26 GHz-band AlGaAs/GaAs HBT power amplifier
Author :
Murakami, S. ; Tanaka, S. ; Amamiya, Y. ; Shimawaki, H. ; Goto, N. ; Honjo, K. ; Ishida, Y. ; Saitoh, Y. ; Yajima, M. ; Hisada, Y.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; 1 GHz; 21.1 percent; 25.5 to 26.5 GHz; 3.6 to 3.63 W; AlGaAs-GaAs; HBT power amplifier; SHF; common-base HBT chips; heterojunction bipolar transistor; Contact resistance; Fixtures; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Laboratories; National electric code; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567751
