A 50 W low distortion GaAs MESFET for digital cellular base stations

Author

Ono, F. ; Emori, F. ; Asano, K. ; Morikawa, J. ; Kanamori, M. ; Hirayama, H.

Author_Institution

Compound Semicond. Dev. Div., NEC Corp., Kawasaki, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

103

Lastpage

106

Abstract

A 50 W low distortion GaAs MESFET for L-band has been successfully developed by optimizing chip design and adopting nearly B-class push-pull operation. The newly developed FET achieved a P/sub 1 dB/ of 47.1 dBm (51.3 W) with a linear gain (GL) of 13.1 dB and the maximum drain efficiency of 57% (at freq=1.5 GHz, V/sub DS/=10 V, set I/sub DS/=3%Idss). A saturation output power of 47.3 dBm (53.7 W) has also been obtained. This is the highest output power reported so far of GaAs FETs considering an operation at nearly class B. In addition, the FETs exhibited both good linearity and distortion performances. The newly developed FETs will contribute to the improvement in performance of digital cellular base station systems.

Keywords

III-V semiconductors; UHF field effect transistors; cellular radio; digital radio; electric distortion; gallium arsenide; power MESFET; power field effect transistors; 1.5 GHz; 10 V; 13.1 dB; 50 W; 51.3 to 53.7 W; 57 percent; B-class push-pull operation; GaAs; L-band; UHF power device; digital cellular base stations; linearity and distortion performance; low distortion MESFET; Base stations; Chip scale packaging; Design optimization; FETs; Gain; Gallium arsenide; L-band; Linearity; MESFETs; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567755

Filename

567755