DocumentCode
1884420
Title
Avalanche multiplication and breakdown in GaAs/AlGaAs MQW in structures
Author
David, J.P.R. ; Rees, G.J. ; Morley, M.J. ; Roberts, J.S. ; Button, C.C. ; Hill, G. ; Grey, R. ; Robson, P.N.
Author_Institution
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fYear
1993
fDate
34269
Firstpage
42461
Lastpage
42464
Abstract
The authors studied the effect of MQW dimensions on the ionisation coefficients of a series of MQW pin diodes structures for a wide range of well and barrier size. Breakdown voltage was measured and avalanche multiplication was found to be responsible for the breakdown observed. An analysis is presented for the results obtained
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; p-i-n photodiodes; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; MQW pin diodes; avalanche multiplication; avalanche photodiodes; breakdown voltage; effect of MQW dimensions; ionisation coefficients;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
295526
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