Title :
Realization of fast photoreceivers based on ITO/n-GaAs Schottky diodes
Author :
Bashar, S.A. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
Abstract :
Excellent test ITO/n-GaAs Schottky diodes (ideality factor=1.07) have been fabricated by RF sputtering and this process has been optimised to produce high transmission (>90%), low resistivity (<2×10-5 Ωcm) and low leakage (<3 nA), responsivity=0.4A/W. These devices are designed to be monolithically integrated with HBTs to form fast photoreceivers for operation in the 800 nm wavelength for local communication networks
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; photodiodes; semiconductor growth; sputter deposition; tin compounds; 800 nm; III-V semiconductor; ITO-GaAs; InSnO-GaAs; RF sputtering; Schottky diodes; fast photoreceivers; high transmission; low leakage; low resistivity; monolithically integrated; n-type; responsivity;
Conference_Titel :
Optical Detectors and Receivers, IEE Colloquium on
Conference_Location :
London
