Title :
A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio
Author :
Sandstrom, D. ; Varonen, Mikko ; Karkkainen, Mikko ; Halonen, Kari A. I.
Author_Institution :
Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.
Keywords :
CMOS integrated circuits; data compression; IF bandwidth; IR-ratio; W-band CMOS transmitter front-end; W-band transmitter; current 100 mA; frequency 77 GHz to 94 GHz; image rejection ratio; output compression point; size 65 nm; voltage 1.2 V; Bandwidth; CMOS technology; Circuits; Coplanar waveguides; Impedance matching; MIM capacitors; Power generation; Radio frequency; Semiconductor device modeling; Transmitters;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433851
