DocumentCode
1884508
Title
A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio
Author
Sandstrom, D. ; Varonen, Mikko ; Karkkainen, Mikko ; Halonen, Kari A. I.
Author_Institution
Helsinki Univ. of Technol., Espoo, Finland
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
418
Lastpage
419
Abstract
A W-band transmitter front-end has been implemented in 65 nm CMOS. The output power is higher than +4 dBm from 77 GHz to 94 GHz with an image rejection ratio from 15 dB to 25 dB. The highest 1 dB output compression point is +2.2 dBm with +6.6 dBm maximum power at 85 GHz. The transmitter draws 100 mA from a 1.2 V supply.
Keywords
CMOS integrated circuits; data compression; IF bandwidth; IR-ratio; W-band CMOS transmitter front-end; W-band transmitter; current 100 mA; frequency 77 GHz to 94 GHz; image rejection ratio; output compression point; size 65 nm; voltage 1.2 V; Bandwidth; CMOS technology; Circuits; Coplanar waveguides; Impedance matching; MIM capacitors; Power generation; Radio frequency; Semiconductor device modeling; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433851
Filename
5433851
Link To Document