DocumentCode
188451
Title
A comprehensive evaluation of SiC devices in traction applications
Author
Fei Shang ; Arribas, Alejandro Pozo ; Krishnamurthy, Mahesh
Author_Institution
Dept. of Electrican & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear
2014
fDate
15-18 June 2014
Firstpage
1
Lastpage
5
Abstract
With the increasing attentions on electric vehicle (EV), hybrid electric vehicle (HEV) and Plug-in hybrid electric vehicle (PHEV), the significance of power electronics in traction power converter increased through the last decades. Having dominated for years, silicon is now reaching its material limits. As an alternative, wide band gap device such as silicon carbide (SiC) device received more attention. Market of SiC devices has been growing for years and major manufacture are now willing to participate in the SiC business. Physical properties gives SiC advantages over Si, such as high breakdown voltage, low drift region resistance, high temperature operation. For traction inverters, power loss in switches are discussed. It has been demonstrated that SiC devices have lower power losses than Si IGBT which also helps with the sizing and design of the heatsink. In DC-DC converters, the advantage of high switching frequency of SiC devices would have a hugh impact on the overall system for reducing the power loss, size of passive components and total weight. However, high cost, low productivity and reliability under harsh environment are problems facing by SiC devices currently and they are expected to be solved in the future.
Keywords
DC-DC power convertors; automotive electronics; hybrid electric vehicles; power semiconductor switches; semiconductor device reliability; silicon compounds; traction power supplies; wide band gap semiconductors; DC-DC converters; HEV; PHEV; SiC; SiC devices; passive components; plug-in hybrid electric vehicle; power electronics; power loss; silicon carbide device; traction power converter; Hybrid electric vehicles; Insulated gate bipolar transistors; Inverters; Silicon; Silicon carbide; Switches; Switching frequency; HEV; SiC; Traction; Wide bandgap;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Conference and Expo (ITEC), 2014 IEEE
Conference_Location
Dearborn, MI
Type
conf
DOI
10.1109/ITEC.2014.6861777
Filename
6861777
Link To Document