InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain

Author

Yan, B.P. ; Hsu, C.C. ; Wang, X.Q. ; Bai, Y.K. ; Yang, E.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., China

fYear

2002

fDate

2002

Firstpage

169

Lastpage

172

Abstract

An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176 V lower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; valence bands; vapour phase epitaxial growth; 0.914 V; GaAs-based HBTs; GaAsSb base layer; InGaP emitter layer; InGaP-GaAsSb-GaAs; InGaP/GaAsSb/GaAs DHBTs; MOCVD; double heterojunction bipolar transistor; fully strained pseudomorphic GaAsSb; high current gain; turn-on voltage reduction; valence band discontinuity; Conducting materials; Current density; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Photonic band gap; Power dissipation; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014291

Filename

1014291