DocumentCode
1884826
Title
Influence of FISDW depinning on the quantized hall effect in (TMTSF)/Sub 2/pf/Sub 6/
Author
Balicas, L. ; Kriza, G.
Author_Institution
Universite Paris-Sud
fYear
1994
fDate
24-29 July 1994
Firstpage
129
Lastpage
129
Abstract
Summary form only given. The Hall resistance as a function of the current along the conducting chains is investigated in the magnetic-field-induced spin-density wave (FISDW) phases of (TMTSF)/sub 2/PF/sub 6/, (TMTSF stands for tetramethyltetraselenafulvalene). Recently, we have reported/sub 1/ a nonlinear Hall resistance decreasing strongly with increasing current above a well-defined threshold current. Now we present strong evidence that the nonlinearity arises from the depinning of the FISDW. We show that by applying a radio-frequency excitation superimposed on a dc bias, interference features appear in the differential Hall resistance whwnever the phase change rate of the sliding FISDW is equal to the frequency of the rf excitation (Shapiro interference).
Keywords
Hall effect; Physics; Radio frequency; Radiofrequency interference; Solid state circuits; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location
Seoul, Korea
Type
conf
DOI
10.1109/STSM.1994.834873
Filename
834873
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