Title :
Self-consistent study of strained wurtzite GaN quantum-well lasers
Author :
Wang, Jin ; Jeon, J.B. ; Kim, K.W. ; Littlejohn, M.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The photon rate-equation formalism is used to evaluate the multi-mode photon density, the output lasing power, and the modulation frequency response in pseudomorphically-strained wurtzite GaN quantum-well lasers. The formalism is based on a self-consistent methodology that couples an envelope-function (or k·p) Hamiltonian with Poisson´s equation. From this approach, we consider (a) the band structure under the influence of large piezoelectric fields and with many-body effect; and (b) the stimulated and spontaneous emissions for each Fabry-Perot mode. Also the influence of carrier capture processes on the band structure and modulation response is studied by the generalized rate-equation
Keywords :
III-V semiconductors; aluminium compounds; band structure; frequency response; gallium compounds; laser modes; laser theory; optical modulation; quantum well lasers; Fabry-Perot mode; GaN-AlGaN; GaN/AlGaN wurtzite QW structure; Hamiltonian; Poisson equation; band structure; carrier capture processes; envelope-function; generalized rate-equation; large piezoelectric fields; many-body effect; modulation frequency response; multi-mode photon density; output lasing power; photon rate-equation formalism; pseudomorphically-strained quantum-well; self-consistent methodology; spontaneous emission; stimulated emission; wurtzite GaN quantum-well lasers; Gallium compounds;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649371
