DocumentCode :
1884873
Title :
On the thermal resistance of metamorphic and lattice-matched InP HBTs: a comparative study
Author :
Wang, Hong ; Yang, Hong ; Radhakrishnan, K. ; Tan, Chee Leong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2002
fDate :
2002
Firstpage :
177
Lastpage :
180
Abstract :
Studies on thermal resistance of InP heterojunction bipolar transistors grown on GaAs (MHBT) and InP (LHBT) substrates are have been reported. A significant increase in the thermal resistance (Rth) for MHBT is observed. Rth for the MHBT is found to be in the range of 2320 to 2615°C/W, which is roughly 80% higher than that of LHBT. This could be attributed the extremely low thermal conductivity of the ternary metamorphic buffer layer as well as the low thermal conductivity of GaAs substrates.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; substrates; thermal analysis; thermal conductivity; thermal resistance; GaAs; GaAs lattice-matched substrates; GaAs metamorphic substrates; InP-GaAs; heterojunction bipolar transistors; lattice-matched InP HBTs; metamorphic InP HBTs; ternary metamorphic buffer layer; thermal conductivity; thermal resistance; Current measurement; Electric resistance; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Substrates; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014297
Filename :
1014297
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1884873
بازگشت