On the thermal resistance of metamorphic and lattice-matched InP HBTs: a comparative study

Author

Wang, Hong ; Yang, Hong ; Radhakrishnan, K. ; Tan, Chee Leong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

2002

Firstpage

177

Lastpage

180

Abstract

Studies on thermal resistance of InP heterojunction bipolar transistors grown on GaAs (MHBT) and InP (LHBT) substrates are have been reported. A significant increase in the thermal resistance (R_th) for MHBT is observed. R_th for the MHBT is found to be in the range of 2320 to 2615°C/W, which is roughly 80% higher than that of LHBT. This could be attributed the extremely low thermal conductivity of the ternary metamorphic buffer layer as well as the low thermal conductivity of GaAs substrates.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; substrates; thermal analysis; thermal conductivity; thermal resistance; GaAs; GaAs lattice-matched substrates; GaAs metamorphic substrates; InP-GaAs; heterojunction bipolar transistors; lattice-matched InP HBTs; metamorphic InP HBTs; ternary metamorphic buffer layer; thermal conductivity; thermal resistance; Current measurement; Electric resistance; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Substrates; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014297

Filename

1014297