Lattice gas automata simulation of atomistic surface growth

Author

Budiman, R.A. ; Gerisch, A. ; Lawniczak, A.T. ; Ruda, H.E. ; Fuks, H.

Author_Institution

Dept. of Mech. Manuf. Eng., Calgary Univ., Alta., Canada

fYear

2003

fDate

20-23 July 2003

Firstpage

164

Abstract

"Summary form only given". Here we describe a method based on lattice gas automata to numerically simulate atomistic surface growth processes during thin film deposition. Using a realistic approximation of surface energetics, we are able to scale our simulation time to real deposition time corresponding to individual atomic diffusion jumps. The method allows us to model adatom-adatom interaction explicitly, an important feature for investigating the effects of surface elastic forces on surface morphology. The real deposition time and the adatom-adatom interaction distinguishes our method from the more standard kinetic Monte-Carlo simulations of atomistic surface growth. Results obtained for Si/Si(001) deposition for both flat and stepped substrates will be presented.

Keywords

Monte Carlo methods; elemental semiconductors; lattice gas; semiconductor thin films; silicon; surface morphology; Monte-Carlo simulations; Si; Si/Si(001) deposition; adatom-adatom interaction; atomic diffusion; atomistic surface growth; lattice gas automata simulation; numerical simulation; realistic approximation; surface elastic forces; surface energy; surface morphology; thin film deposition; Atomic layer deposition; Automata; Computational modeling; Computer aided manufacturing; Lattices; Manufacturing automation; Manufacturing processes; Mathematics; Surface morphology; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

MEMS, NANO and Smart Systems, 2003. Proceedings. International Conference on

Print_ISBN

0-7695-1947-4

Type

conf

DOI

10.1109/ICMENS.2003.1221986

Filename

1221986