Design of cryogenic (4.2 K) X-band HEMT oscillator for Josephson voltage standard

Author

Moon-Que Lee ; Sangwook Nam ; Kyung-Whan Yeom ; Kyu-Tae Kim

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

1031

Abstract

A new oscillator configuration for a Josephson voltage standard is proposed and designed by a novel method. An analytic design procedure is presented for six general configurations of oscillators with two loads. The power splitting relationship between two loads is derived with respect to the reactive (lossless) embedding element. A HEMT oscillator is designed in X-band for the Josephson voltage standard and tested at room and cryogenic temperatures. There is a significant improvement in C/N ratio if it is operated at cryogenic temperature (4.2 K).

Keywords

HEMT circuits; Josephson effect; cryogenic electronics; hybrid integrated circuits; measurement standards; microwave integrated circuits; microwave oscillators; superconducting junction devices; voltage measurement; 4.2 K; Josephson voltage standard; analytic design procedure; cryogenic X-band HEMT oscillator; hybrid MIC; lossless embedding element; power splitting relationship; reactive embedding element; Coupling circuits; Cryogenics; Frequency; HEMTs; Josephson junctions; Microwave oscillators; Power generation; Temperature; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705169

Filename

705169