DocumentCode :
1885008
Title :
A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS
Author :
Mazzanti, Andrea ; Monaco, E. ; Pozzoni, M. ; Svelto, Francesco
Author_Institution :
Univ. of Modena & Reggio Emilia, Modena, Italy
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
422
Lastpage :
423
Abstract :
A CMOS frequency multiplier is based on a Pierce oscillator injection-locked by a push-push pair. Compared to traditional stand-alone push-push multipliers driving a selective load, this solution provides a differential output and a larger voltage swing. When driven by a half-frequency VCO, prototypes in 65 nm CMOS demonstrate a 13.1% tuning range at 115 GHz with a phase noise of -107 dBc/Hz @ 10 MHz offset for a total power dissipation of 12 mW.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; low-power electronics; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS frequency multiplier; frequency 115 GHz; frequency generator; half-frequency VCO; injection-locked Pierce oscillator; injection-locked frequency doubler; phase noise; power 12 mW; power dissipation; size 65 nm; stand-alone push-push multipliers; CMOS technology; Capacitors; Circuits; Frequency; Injection-locked oscillators; Phase noise; Semiconductor device measurement; Tuning; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5433869
Filename :
5433869
Link To Document :
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