Temperature-dependent breakdown behavior in InP double heterojunction bipolar transistors (DHBTs) with InGaAs/InP composite collector

Author

Wang, Hong ; Yang, Hong ; Radhakrishnan, K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

2002

Firstpage

189

Lastpage

191

Abstract

Temperature-dependent collector breakdown behavior in InP HBTs with an InGaAs/InP composite collector has been investigated. We have found that, in the layer structures studied, the device shows a positive temperature dependence of common-emitter breakdown at temperatures lower than 330 K due to the negative temperature dependence of impact ionization coefficient in InP. However, at higher temperatures, the contribution of InGaAs layer becomes important and a negative temperature dependence of collector breakdown is observed.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; semiconductor device breakdown; 330 K; InGaAs-InP; InGaAs/InP composite collector; InP DHBTs; collector breakdown; common-emitter breakdown; double heterojunction bipolar transistors; impact ionization coefficient; layer structures; negative temperature dependence; positive temperature dependence; temperature-dependent breakdown behavior; Bipolar transistors; Double heterojunction bipolar transistors; Electric breakdown; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Microelectronics; Photonic band gap; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014304

Filename

1014304