Title :
A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS
Author :
Jie-Wei Lai ; Valdes-Garcia, A.
Author_Institution :
MediaTek, Hsinchu, Taiwan
Abstract :
A CMOS PA integrating a power detector for all IEEE 802.15.3c bands is demonstrated. A fully synchronous power combiner removes design trade-offs between transformer efficiency and power combining efficiency. At 1 V supply, the measured Psat, OP1dB, and peak PAE at 61.5 GHz are 17.9 dBm, 15.4 dBm, and 11.7% respectively. A Psat of +17 dBm and an OP1dB of +14 dBm are achieved across the 57-to-65 GHz band.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; field effect MIMIC; low-power electronics; millimetre wave power amplifiers; CMOS PA; IEEE 802.15.3c bands; frequency 60 GHz; power amplifier; power combining efficiency; power detector; size 65 nm; synchronous power combiner; transformer efficiency; voltage 1 V; CMOS technology; Circuits; Feeds; Frequency; Impedance matching; Power amplifiers; Power combiners; Semiconductor device measurement; Shape; Transformers;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433870
