Title :
Study of hot-carrier stress effects on the DC characteristics of SOI NMOST´s operating at 4.2 K
Author :
Simoen, E. ; Gao, M.H. ; Colinge, J.P. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The influence of hot-carrier stress on SOI (silicon-on-insulator) transistors, fabricated on different substrate types (Kopin, laser-recrystallized, and SIMOX) and in different technologies, is reported. Different behavior is observed for samples stressed under rather symmetrical bias conditions (e.g., the drain voltage V ds≈the gate voltage Vgs), called the weak stress condition, compared with devices operated under strong stress (Vds≫Vgs)
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device testing; semiconductor-insulator boundaries; 4.2 K; DC characteristics; Kopin substrate; SIMOX substrate; SOI NMOST; drain voltage; gate voltage; hot-carrier stress effects; laser recrystallized substrate; symmetrical bias conditions; weak stress condition; Abstracts; Conferences; Cooling; Electron devices; Hot carrier effects; Hot carriers; Solid state circuits; Stress; Temperature; Threshold voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162827
