• DocumentCode
    1885085
  • Title

    Study of hot-carrier stress effects on the DC characteristics of SOI NMOST´s operating at 4.2 K

  • Author

    Simoen, E. ; Gao, M.H. ; Colinge, J.P. ; Claeys, C.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1991
  • fDate
    1-3 Oct 1991
  • Firstpage
    2
  • Lastpage
    3
  • Abstract
    The influence of hot-carrier stress on SOI (silicon-on-insulator) transistors, fabricated on different substrate types (Kopin, laser-recrystallized, and SIMOX) and in different technologies, is reported. Different behavior is observed for samples stressed under rather symmetrical bias conditions (e.g., the drain voltage V ds≈the gate voltage Vgs), called the weak stress condition, compared with devices operated under strong stress (Vds≫Vgs)
  • Keywords
    hot carriers; insulated gate field effect transistors; semiconductor device testing; semiconductor-insulator boundaries; 4.2 K; DC characteristics; Kopin substrate; SIMOX substrate; SOI NMOST; drain voltage; gate voltage; hot-carrier stress effects; laser recrystallized substrate; symmetrical bias conditions; weak stress condition; Abstracts; Conferences; Cooling; Electron devices; Hot carrier effects; Hot carriers; Solid state circuits; Stress; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1991. Proceedings, 1991., IEEE International
  • Conference_Location
    Vail Valley, CO
  • Print_ISBN
    0-7803-0184-6
  • Type

    conf

  • DOI
    10.1109/SOI.1991.162827
  • Filename
    162827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1885085