Title :
ITO transparent gates over Si3N4 laver for an IT-CCD image sensor with improved photo current.
Author :
Abdallah, S. ; Salch, B. ; AboulSeoud, A.K.
Author_Institution :
Electron. & Commun. Dept., Arab Acad. of Sci. & Technol., Alexandria
Abstract :
A newly modified architecture using indium tin oxide (ITO) transparent gates is being tested to increase the photo-sensitivity of solid state image sensors. Applying it to the inter line CCD (IT-CCD) with a reduced vertical overflow drain (VOD) shutter voltage structure over a layer of Si3N4, its photo-responsivity was increased resulting in eventually an improvement in its photo current (I Ph) along the light spectrum. In addition, a similar improvement occurred in its quantum efficiency (Q.E)
Keywords :
CCD image sensors; indium compounds; photochemistry; photoconductivity; photoemission; tin compounds; IT-CCD image sensor; ITO transparent gate; In2-xSnxO3-y; QE; Si3N4; VOD; indium tin oxide; inter line charge-coupled device; photo current; photosensitivity; quantum efficiency; shutter voltage structure; solid state image sensor; vertical overflow drain; Charge coupled devices; Charge-coupled image sensors; Costs; Detectors; Electrodes; Image sensors; Indium tin oxide; Joining processes; Silicon; Virtual reality;
Conference_Titel :
Radio Science Conference, 2005. NRSC 2005. Proceedings of the Twenty-Second National
Conference_Location :
Cairo
Print_ISBN :
977-503183-4
DOI :
10.1109/NRSC.2005.194040
