Title :
Effect of particles on buried oxide defects in SIMOX material
Author :
Joyner, K. ; El-Ghor, M. ; Hosack, H.
Author_Institution :
Texas Instuments, Inc., Dallas, TX, USA
Abstract :
An array of artificial particles composed of silicon dioxide was created by growing a film of SiO2 one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interesting of these shapes are long lines and individual dots. These lines make it practical to analyze the structures by cross-sectional scanning and transmission electron microscopy. The shape of one of the lines after implantation to a dose of 1.8×1018 at an implantation temperature of 630°C is shown
Keywords :
crystal defects; etching; ion implantation; scanning electron microscope examination of materials; semiconductor-insulator boundaries; transmission electron microscope examination of materials; 630 degC; SIMOX material; Si wafer surface; SiO2-Si; artificial particle array; buried oxide defects; cross sectional SEM; cross sectional TEM; etching; implantation temperature; individual dots; ion implantation dose; long lines; patterning; Conducting materials; Implants; Instruments; Lifting equipment; Shape; Silicon compounds; Sputter etching; Sputtering; Substrates; Temperature;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162828
