• DocumentCode
    1885378
  • Title

    A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

  • Author

    Law, C.Y. ; Pham, Anh-Vu

  • Author_Institution
    Univ. of California, Davis, CA, USA
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    426
  • Lastpage
    427
  • Abstract
    A fully integrated 60 GHz power amplifier using a standard 90 nm CMOS process is presented. The power amplifier consists of six 2-stage power amplifiers, three 2-way Wilkinson power splitters for parallel amplification, and three 2-way Wilkinson power combiners to combine the output power. The power amplifier achieves again of +20 dB, a P1dB of +18 dBm and a Psat of +20 dBm with 1.2 V supply.
  • Keywords
    CMOS integrated circuits; millimetre wave power amplifiers; power combiners; 2-stage power amplifier; 2-way Wilkinson power combiners; 2-way Wilkinson power splitters; CMOS process; frequency 60 GHz; gain 20 dB; high-gain power amplifier; integrated power amplifier; output power; parallel amplification; size 90 nm; CMOS process; Capacitors; Frequency; High power amplifiers; Impedance matching; Microstrip; Power amplifiers; Power combiners; Power generation; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433882
  • Filename
    5433882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1885378