Pulse low-energy electron beam pumped IR-lasers based on InGaAs/AlGaAs/GaAs nanoheterostructures

Author

Gamov, N.A. ; Zhdanova, E.V. ; Zverev, M.M. ; Marmalyuk, Aleksandr A. ; Ladugin, Maxim A. ; Anishchenko, I.A. ; Bagaev, Timur A. ; Peregoudov, D.V. ; Studionov, V.B.

Author_Institution

Moscow State Inst. of Radio Eng., Electron. & Autom., Moscow, Russia

fYear

2013

fDate

11-13 Sept. 2013

Firstpage

82

Lastpage

83

Abstract

Temperature dependence of threshold current density in the range 50-300 K for lasers based on InGaAs/AlGaAs/GaAs quantum-dimensional heterostructures under electron beam pumping with electron energy in the range 2-11 keV is investigated. Minimal threshold current density value as low as 0.05 A/cm² at the electron energy of 9-11 keV and temperature 200 K is obtained. Laser generation is obtained at record low electron energies: less than 2.5 keV at T<;150 K and 3.5 keV at T=300 K. The possibility of further reducing of electron energy at T=300 K is discussed.

Keywords

III-V semiconductors; aluminium compounds; current density; electron beam effects; gallium arsenide; indium compounds; nanostructured materials; optical pumping; semiconductor lasers; InGaAs-AlGaAs-GaAs; electron beam pumping; electron energy; electron volt energy 2 keV to 11 keV; laser generation; pulse low-energy electron beam pumped infrared lasers; quantum-dimensional nanoheterostructures; temperature 50 K to 300 K; threshold current density; Electron beams; Laser beams; Laser excitation; Laser modes; Pump lasers; Semiconductor lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2013 12th International Conference on

Conference_Location

Sudak

Print_ISBN

978-1-4799-0158-6

Type

conf

DOI

10.1109/LFNM.2013.6644843

Filename

6644843