Title :
1.55 µm InP-based short-cavity-VCSELs with enhanced modulation-bandwidth of 15 GHz
Author :
Müller, M. ; Hofmann, W. ; Böhm, G. ; Rosskopf, J. ; Rönneberg, E. ; Ortsiefer, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univeristat Munchen, Garching, Germany
Abstract :
InP-based burried tunnel junction VCSELs incorporating a novel short-cavity design are presented. These devices show record-high modulation-bandwidths in excess of 15 GHz together with greatly enhanced intrinsic resonance-frequencies. Intrinsic damping is improved due to reduced photon-lifetime.
Keywords :
III-V semiconductors; indium compounds; surface emitting lasers; InP; VCSEL; burried tunnel junction; enhanced modulation-bandwidth; frequency 15 GHz; intrinsic damping; intrinsic resonance-frequencies; photon-lifetime; record-high modulation-bandwidths; short-cavity design; size 1.55 mum; vertical cavity surface emitting lasers; Bandwidth; Costs; Dielectric substrates; Gold; Heat sinks; Mirrors; Surface emitting lasers; Thermal conductivity; Vertical cavity surface emitting lasers; Zinc compounds;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
