• DocumentCode
    1885495
  • Title

    Energetics and strain field of surface steps

  • Author

    Budiman, R.A.

  • Author_Institution
    Dept. of Mech. & Manuf. Eng., Univ. of Calgary, Alta., Canada
  • fYear
    2003
  • fDate
    20-23 July 2003
  • Firstpage
    270
  • Lastpage
    273
  • Abstract
    Stability and surface morphology of a thin film deposited in ultrahigh vacuum condition depend on strain energy stored in the thin film. Predicting the stability and morphology of such surfaces is essential for understanding, e.g., (i) the formation and growth of nanocrystals (quantum dots) in semiconductor heteroepitaxial thin film deposition and (ii) the requirements to grow flat thin films despite the presence of surface steps. This work describes a novel, theoretical model that gives rise to modified mechanical force equilibrium equations and provides a new framework to model step energetics and dynamics in heteroepitaxial thin films. Specializing in two-dimensional thin films, strain fields and energetics of a solitary surface step will be presented.
  • Keywords
    chemical potential; elasticity; internal stresses; semiconductor epitaxial layers; semiconductor quantum dots; solitons; surface morphology; surface potential; mechanical force equilibrium equations; nanocrystals; quantum dots; semiconductor heteroepitaxial thin film deposition; solitary surface; strain energy; strain field; surface morphology; theoretical model; ultrahigh vacuum; Capacitive sensors; Elementary particle vacuum; Equations; Nanocrystals; Quantum dots; Semiconductor thin films; Sputtering; Stability; Surface morphology; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    MEMS, NANO and Smart Systems, 2003. Proceedings. International Conference on
  • Print_ISBN
    0-7695-1947-4
  • Type

    conf

  • DOI
    10.1109/ICMENS.2003.1222007
  • Filename
    1222007