DocumentCode
1885495
Title
Energetics and strain field of surface steps
Author
Budiman, R.A.
Author_Institution
Dept. of Mech. & Manuf. Eng., Univ. of Calgary, Alta., Canada
fYear
2003
fDate
20-23 July 2003
Firstpage
270
Lastpage
273
Abstract
Stability and surface morphology of a thin film deposited in ultrahigh vacuum condition depend on strain energy stored in the thin film. Predicting the stability and morphology of such surfaces is essential for understanding, e.g., (i) the formation and growth of nanocrystals (quantum dots) in semiconductor heteroepitaxial thin film deposition and (ii) the requirements to grow flat thin films despite the presence of surface steps. This work describes a novel, theoretical model that gives rise to modified mechanical force equilibrium equations and provides a new framework to model step energetics and dynamics in heteroepitaxial thin films. Specializing in two-dimensional thin films, strain fields and energetics of a solitary surface step will be presented.
Keywords
chemical potential; elasticity; internal stresses; semiconductor epitaxial layers; semiconductor quantum dots; solitons; surface morphology; surface potential; mechanical force equilibrium equations; nanocrystals; quantum dots; semiconductor heteroepitaxial thin film deposition; solitary surface; strain energy; strain field; surface morphology; theoretical model; ultrahigh vacuum; Capacitive sensors; Elementary particle vacuum; Equations; Nanocrystals; Quantum dots; Semiconductor thin films; Sputtering; Stability; Surface morphology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
MEMS, NANO and Smart Systems, 2003. Proceedings. International Conference on
Print_ISBN
0-7695-1947-4
Type
conf
DOI
10.1109/ICMENS.2003.1222007
Filename
1222007
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