DocumentCode :
1885634
Title :
Influence of phosphorus on undoped and zinc doped InGaAs
Author :
Karlina, L.B. ; Ber, B.Ya. ; Blagnov, P.A. ; Boiko, A.M. ; Kulagina, M.M. ; Vlasov, A.S.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear :
2002
fDate :
2002
Firstpage :
213
Lastpage :
215
Abstract :
Simultaneous diffusion of P and Zn in In0.53Ga0.47As using Sn-InP-Zn as a dopant source is investigated. The dependence of the diffusion profiles Zn and P on diffusion time at 600°C is presented. Typical zinc concentration and depths obtained are 10*19 cm-3 and 0.5-1.3 μm. The incorporation of P into InGaAs at almost constant concentration for layers of 3-μm thickness was detected. The effects of the exposure of InGaAs to 1 MeV electron fluence 1015, 1016 cm-2 were investigated by photoluminescence and Raman scattering. Results presented here show a slight increase in PL emission after irradiation InGaAs (Zn, P) by fluence of 1015 cm-2. The free carrier concentration remains at the same level before and after irradiation.
Keywords :
III-V semiconductors; Raman spectra; carrier density; diffusion; doping profiles; electron beam effects; gallium arsenide; indium compounds; phosphorus; photoluminescence; semiconductor doping; zinc; 0.5 to 1.3 micron; 1 MeV; 1 MeV electron irradiation; 600 C; In0.53Ga0.47As:P,Zn; Raman scattering; diffusion profiles; diffusion time; free carrier concentration; photoluminescence; simultaneous diffusion; Argon; Electrons; Hydrogen; Indium gallium arsenide; Laser excitation; Photoluminescence; Photovoltaic cells; Raman scattering; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN :
1092-8669
Print_ISBN :
0-7803-7320-0
Type :
conf
DOI :
10.1109/ICIPRM.2002.1014325
Filename :
1014325
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1885634
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