Title :
A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C
Author :
Sebastiano, Fabio ; Breems, Lucien J. ; Makinwa, Kofi A. A. ; Drago, S. ; Leenaerts, Domine M. W. ; Nauta, Bram
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
A temperature sensor utilizing NPN transistors has been realized in a 65 nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ)from -70°C to 125°C The sensor draws 8.3 μA from a 1.2 V supply and occupies an area of 0.1 mm2.
Keywords :
CMOS integrated circuits; signal processing equipment; temperature sensors; CMOS technology; batch calibrated inaccuracy; current 8.3 μA; power 10 μW; size 65 nm; temperature -70 C to 125 C; temperature sensor; voltage 1.2 V; CMOS technology; Pipelines; Robustness; Sampling methods; Switches; Tail; Temperature sensors; Testing; Timing; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433895
