Hot electron gate current and degradation in P-channel SOI MOSFETs

I_G in P-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that E_m is about the same as in bulk devices. The SOI devices used in this study were p⁺ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both I_D and G_m occurs close to the I_g peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS