DocumentCode :
1885994
Title :
A 200MHz 300ps 0.5pJ/ns optical pulse generator array in 0.35µm CMOS
Author :
Rae, B.R. ; McKendry, Jonathan ; Zheng Gong ; Gu, Erdan ; Renshaw, D. ; Dawson, Martin D. ; Henderson, Robert K.
Author_Institution :
Univ. of Edinburgh, Edinburgh, UK
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
322
Lastpage :
323
Abstract :
An 8 × 8 array of AllnGaN micro-LEDs is bump-bonded to a standard 0.35 μm CMOS driver chip. Each pixel can be independently pulsed at a rate of 200 MHz with pulsewidths down to 300 ps FWHM at optical power levels of 0.5 pJ/ns at 370 nm. Circuit techniques to minimize pulsewidths are demonstrated. Applications include chip-to-chip communications and lab-on-chip devices.
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical pulse generation; pulse generators; wide band gap semiconductors; AlInGaN; CMOS driver chip; FWHM; chip-to-chip communications; circuit techniques; frequency 200 MHz; lab-on-chip devices; micro-LED; optical power levels; optical pulse generator array; pulsewidths; size 0.35 μm; time 300 ps; wavelength 370 nm; Biomedical optical imaging; Fluorescence; Light emitting diodes; Optical arrays; Optical pulse generation; Optical pulses; Sensor arrays; Space vector pulse width modulation; Ultrafast optics; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5433904
Filename :
5433904
Link To Document :
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