A 200MHz 300ps 0.5pJ/ns optical pulse generator array in 0.35µm CMOS

Author

Rae, B.R. ; McKendry, Jonathan ; Zheng Gong ; Gu, Erdan ; Renshaw, D. ; Dawson, Martin D. ; Henderson, Robert K.

Author_Institution

Univ. of Edinburgh, Edinburgh, UK

fYear

2010

fDate

7-11 Feb. 2010

Firstpage

322

Lastpage

323

Abstract

An 8 Ã— 8 array of AllnGaN micro-LEDs is bump-bonded to a standard 0.35 μm CMOS driver chip. Each pixel can be independently pulsed at a rate of 200 MHz with pulsewidths down to 300 ps FWHM at optical power levels of 0.5 pJ/ns at 370 nm. Circuit techniques to minimize pulsewidths are demonstrated. Applications include chip-to-chip communications and lab-on-chip devices.

Keywords

CMOS integrated circuits; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical pulse generation; pulse generators; wide band gap semiconductors; AlInGaN; CMOS driver chip; FWHM; chip-to-chip communications; circuit techniques; frequency 200 MHz; lab-on-chip devices; micro-LED; optical power levels; optical pulse generator array; pulsewidths; size 0.35 μm; time 300 ps; wavelength 370 nm; Biomedical optical imaging; Fluorescence; Light emitting diodes; Optical arrays; Optical pulse generation; Optical pulses; Sensor arrays; Space vector pulse width modulation; Ultrafast optics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4244-6033-5

Type

conf

DOI

10.1109/ISSCC.2010.5433904

Filename

5433904