Paramagnetic defect creation and charge trapping in SIMOX films at high and very high dose levels

Electron spin-resonance of the oxygen vacancy center (ESR) E´ has proved to be an interesting tool for investigating SIMOX (separation by implanted oxygen) buried oxide (BOX) irradiation behavior. The authors present experimental data concerning the relationship between trapped charge and E´ signal after irradiation. The SIMOX BOX was prepared in a standard single implant process at the CEA. Irradiations were made using an Aracor 4100 10-keV X-ray irradiator (400 krad(SiO₂)/min). It is found that E´ center generation and charge trapping are both connected via the electron-hole generation nonrecombination yield. This is consistent with the classical picture of an E´ center as directly associated with a trapped hole