Title :
Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed Bragg reflectors grown by metal-organic vapor-phase epitaxy
Author :
Sundgren, P. ; Asplund, C. ; Baskae, K. ; Hammar, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence spectra were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; distributed Bragg reflector lasers; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; surface structure; vapour phase epitaxial growth; 745 to 680 C; AlGaAs-GaAs; AlGaAs/GaAs DBRs; AlGaAs/GaAs distributed Bragg reflectors; DBR periods; DBR-growth temperatures; GaInNAs-GaAs; GaInNAs/GaAs single quantum wells; MOVPE growth; atomic force microscopy; growth temperature; metal-organic vapor-phase epitaxy; morphological instability; optical integrity; quantum well photoluminescence; structural integrity; surface morphology; vertical-cavity lasers; Atom optics; Atomic force microscopy; Atomic measurements; Distributed Bragg reflectors; Epitaxial growth; Force measurement; Gallium arsenide; Photoluminescence; Surface morphology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014343
