• DocumentCode
    1886241
  • Title

    A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface

  • Author

    Hyunggon Kim ; Jung-Hoon Park ; Ki-Tae Park ; Pansuk Kwak ; Ohsuk Kwon ; Chulbum Kim ; Younyeol Lee ; Sangsoo Park ; Kyungmin Kim ; Doohyun Cho ; Juseok Lee ; Jungho Song ; Soowoong Lee ; Hyukjun Yoo ; Sanglok Kim ; Seungwoo Yu ; Sungjun Kim ; Sungsoo Lee

  • Author_Institution
    Samsung Electron., Hwasung, South Korea
  • fYear
    2010
  • fDate
    7-11 Feb. 2010
  • Firstpage
    442
  • Lastpage
    443
  • Abstract
    We present a 159 mm2 32 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by using DDR interface and by using new core memory and data path architecture as well as program algorithm.
  • Keywords
    NAND circuits; asynchronous circuits; flash memories; nanotechnology; MLC NAND flash memory; asynchronous DDR interface; core memory; data path architecture; double data rate; nanotechnology; program algorithm; size 32 nm; storage capacity 32 Gbit; Bridge circuits; Degradation; Delay; Interference; Interleaved codes; Power supplies; Pulse modulation; Switches; Throughput; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4244-6033-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2010.5433912
  • Filename
    5433912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1886241