Title :
A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface
Author :
Hyunggon Kim ; Jung-Hoon Park ; Ki-Tae Park ; Pansuk Kwak ; Ohsuk Kwon ; Chulbum Kim ; Younyeol Lee ; Sangsoo Park ; Kyungmin Kim ; Doohyun Cho ; Juseok Lee ; Jungho Song ; Soowoong Lee ; Hyukjun Yoo ; Sanglok Kim ; Seungwoo Yu ; Sungjun Kim ; Sungsoo Lee
Author_Institution :
Samsung Electron., Hwasung, South Korea
Abstract :
We present a 159 mm2 32 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by using DDR interface and by using new core memory and data path architecture as well as program algorithm.
Keywords :
NAND circuits; asynchronous circuits; flash memories; nanotechnology; MLC NAND flash memory; asynchronous DDR interface; core memory; data path architecture; double data rate; nanotechnology; program algorithm; size 32 nm; storage capacity 32 Gbit; Bridge circuits; Degradation; Delay; Interference; Interleaved codes; Power supplies; Pulse modulation; Switches; Throughput; Voltage;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433912
