Title :
High linearity and high responsivity UTC photodiode for multi-level formats applications
Author :
Caillaud, C. ; Glastre, G. ; Carpentier, D. ; Lelarge, F. ; Rousseau, B. ; Blache, F. ; Achouche, M.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We present an evanescent waveguide InGaAs/InGaAsP UTC PD with respectively a bandwidth Gt 50 GHz, a responsivity of 0.55 A/W and an IP3 of 19.7 dBm at 10 mA and 20 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; photodiodes; InGaAs-InGaAsP; UTC photodiode; current 10 mA; evanescent waveguide; frequency 20 GHz; frequency 50 GHz; Absorption; Bandwidth; Dry etching; Linearity; Optical distortion; Optical filters; Optical receivers; Optical waveguides; Photoconductivity; Photodiodes;
Conference_Titel :
Optical Communication, 2009. ECOC '09. 35th European Conference on
Conference_Location :
Vienna
Print_ISBN :
978-1-4244-5096-1
