Band gap reduction in InAsN alloy

Author

Chu, Tso-Yu ; Lin, Hao-Hsiung ; Shih, Ding-Kang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2002

fDate

2002

Firstpage

253

Lastpage

256

Abstract

We report the absorption and photoluminescence (PL) properties of InAsN alloys grown by gas source molecular beam epitaxy. A calculation based on the band anticrossing model was used to evaluate the Burstein-Moss effect and the band renormalization effect due to the high residual carrier density in the alloy and also the original band gap energy. It can be seen from our calculation that the broad linewidths of the PL spectra are due to the Burstein-Moss effect, and the high-energy edges of these spectra are consistent with the results from absorption measurements. The low-energy edges of PL spectra are also shown to be close to the calculated original band gap energy.

Keywords

III-V semiconductors; absorption coefficients; carrier density; chemical beam epitaxial growth; energy gap; indium compounds; photoluminescence; semiconductor epitaxial layers; spectral line breadth; Burstein-Moss effect; GSMBE growth; InAsN; InAsN alloy; absorption coefficient; band anticrossing model; band gap energy; band gap reduction; band renormalization effect; broad linewidths; gas source molecular beam epitaxy; high residual carrier density; high-energy edges; low-energy edges; photoluminescence properties; Absorption; Buffer layers; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Photonic band gap; Plasma properties; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014351

Filename

1014351