• DocumentCode
    1886401
  • Title

    Very low dark current AlInAs/GaInAs SAGM avalanche photodiodes for 10Gb/s applications

  • Author

    Lahrichi, Majda ; Derouin, E. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Glastre, G. ; Achouche, M.

  • Author_Institution
    III-V Lab., Alcatel-Thales, Marcoussis, France
  • fYear
    2009
  • fDate
    20-24 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM = 0.19 nA), a responsivity of 0.9 A/W (at M = 1), a very low noise (F(M = 10) = 3.3), and a high gain bandwidth (150 GHz).
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; AlInAs-GaInAs; SAGM avalanche photodiodes; dark current; gain bandwidth; noise; responsivity; Avalanche photodiodes; Dark current; Doping; Epitaxial growth; Gain measurement; Indium phosphide; Optical noise; Optical receivers; Photoconductivity; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2009. ECOC '09. 35th European Conference on
  • Conference_Location
    Vienna
  • Print_ISBN
    978-1-4244-5096-1
  • Type

    conf

  • Filename
    5287222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1886401