Improved performance of InGaAsN/GaAs lasers with low temperature grown quantum well by MOCVD

Author

Yeh, N.-T. ; Wu, B.-R. ; Ho, W.-J. ; Chyi, J.-I.

Author_Institution

Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan

fYear

2002

fDate

2002

Firstpage

257

Lastpage

260

Abstract

This paper presents the lasing properties of InGaAsN/GaAs lasers with a low temperature and high temperature grown quantum well (QW) by metal-organic chemical vapor deposition. The lasing wavelength, threshold current densities and characteristic temperature of both QW lasers are characterized and correlated with the photoluminescence spectra. These results show the quality improvement of the lasers with a low growth temperature grown QW. 1.27 μm InGaAsN/GaAs edge emitting QW lasers with low threshold current density of 1.5 kA/cm² and high characteristics temperature of 115 K are demonstrated.

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.27 micron; 115 K; GRINSCH lasers; InGaAsN-GaAs; InGaAsN/GaAs lasers; MOCVD; SQW lasers; carrier confinement; characteristic temperature; crystal quality; edge emitting QW lasers; high temperature grown QW; lasing properties; lasing wavelength; low temperature grown QW; metal-organic CVD; metal-organic chemical vapor deposition; photoluminescence spectra; quality improvement; single quantum well structure; temperature stability; threshold current densities; Chemical lasers; Conducting materials; Gallium arsenide; MOCVD; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014353

Filename

1014353