DocumentCode :
1886506
Title :
PTAT CMOS current sources mismatch over temperature
Author :
Aita, Andre L. ; Rodrigues, Cesar R.
Author_Institution :
Electron. & Comput. Dept., Fed. Univ. of Santa Maria, Santa Maria, Brazil
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Proportional to Absolute Temperature (PTAT) CMOS current sources are widely used in temperature sensors, bandgap references, and other temperature-compensating circuits. Most of these applications strongly rely on the accuracy of a current ratio m established with a set of 1+m PTAT current sources. However, a PTAT CMOS current source has a temperature-dependent bias point, which in turn, has a well-known effect on the mismatch of CMOS current sources. This paper analyzes the mismatching properties of PTAT current sources due to variation of the current-sources bias point (gm/IDS) with temperature, from -55°C to 125°C. After the analysis, the paper shows measurements of a precision temperature sensor without mismatch compensation to corroborate the analysis developed.
Keywords :
CMOS integrated circuits; compensation; constant current sources; temperature sensors; PTAT CMOS current sources; bandgap references; current ratio; current-sources bias point; mismatching properties; precision temperature sensor; proportional to absolute temperature; temperature -55 C to 125 C; temperature-compensating circuits; temperature-dependent bias point; CMOS integrated circuits; Capacitors; Current measurement; Temperature; Temperature dependence; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits and Systems Design (SBCCI), 2013 26th Symposium on
Conference_Location :
Curitiba
Type :
conf
DOI :
10.1109/SBCCI.2013.6644885
Filename :
6644885
Link To Document :
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