DocumentCode :
1886668
Title :
High dynamic range CMOS filter
Author :
Qureshi, M.S. ; Allen, P.E.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2005
fDate :
18-20 May 2005
Firstpage :
14
Abstract :
Summary form only given. Implementation of high dynamic range on-chip 70 MHz gm-C (transconductor-capacitor) filter for a UMTS (WCDMA) superheterodyne receiver is described. The filter is designed in National Semiconductor´s 0.18 micron standard CMOS process. Chebyshev approximation is used to implement a 6th order filter in active gm-C. Positive feedback is used to realize a large quality factor (Q). This filter provides blocker attenuation with dynamic range (DR) of 42 dB and with power consumption of 21.78 mW.
Keywords :
3G mobile communication; CMOS analogue integrated circuits; Chebyshev approximation; Q-factor; VHF filters; circuit feedback; code division multiple access; integrated circuit design; power consumption; superheterodyne receivers; 0.18 micron; 21.78 mW; 70 MHz; CMOS filter; Chebyshev approximation; Q-factor; UMTS; WCDMA; blocker attenuation; high dynamic range CMOS filter; high dynamic range filter; positive feedback; power consumption; quality factor; superheterodyne receiver; transconductor-capacitor filter; 3G mobile communication; Active filters; Attenuation; CMOS process; Chebyshev approximation; Dynamic range; Energy consumption; Feedback; Multiaccess communication; Q factor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nonlinear Signal and Image Processing, 2005. NSIP 2005. Abstracts. IEEE-Eurasip
Conference_Location :
Sapporo
Print_ISBN :
0-7803-9064-4
Type :
conf
DOI :
10.1109/NSIP.2005.1502233
Filename :
1502233
Link To Document :
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