DocumentCode
1886870
Title
Heterointerfaces in III-V semiconductor nanowhiskers
Author
Persson, A.L. ; Ohlsson, B.J. ; Björk, M.T. ; Thelander, C. ; Magnusson, M.H. ; Deppert, K. ; Sass, T. ; Wallenberg, L.R. ; Samuelson, L.
Author_Institution
Dept. of Solid State Phys., Lund Univ., Sweden
fYear
2002
fDate
2002
Firstpage
281
Lastpage
283
Abstract
We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; interface structure; nanostructured materials; semiconductor growth; semiconductor heterojunctions; whiskers (crystal); III-V semiconductor nanowhiskers; InAs-GaAs; InP-GaAs; atomically abrupt interfaces; chemical beam epitaxy; growth conditions; heterointerfaces; Aerosols; Atomic layer deposition; Chemicals; Crystalline materials; Epitaxial growth; Gold; III-V semiconductor materials; Nanostructures; Physics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014367
Filename
1014367
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