Title :
Heterointerfaces in III-V semiconductor nanowhiskers
Author :
Persson, A.L. ; Ohlsson, B.J. ; Björk, M.T. ; Thelander, C. ; Magnusson, M.H. ; Deppert, K. ; Sass, T. ; Wallenberg, L.R. ; Samuelson, L.
Author_Institution :
Dept. of Solid State Phys., Lund Univ., Sweden
Abstract :
We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; interface structure; nanostructured materials; semiconductor growth; semiconductor heterojunctions; whiskers (crystal); III-V semiconductor nanowhiskers; InAs-GaAs; InP-GaAs; atomically abrupt interfaces; chemical beam epitaxy; growth conditions; heterointerfaces; Aerosols; Atomic layer deposition; Chemicals; Crystalline materials; Epitaxial growth; Gold; III-V semiconductor materials; Nanostructures; Physics; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014367
