DocumentCode :
1886888
Title :
Angular dependence of the high field phase transition in /spl alpha/-(BEDT-TTF)/sub 2/T1Hg(SCN)/sub 4/
Author :
Athas, G.J. ; Klepper, S.J. ; Brooks, J.S. ; Tokumoto, Mitsuhiro ; Tanaka, Yuichi ; Kinoshita, T. ; Kinoshita, Naohiko ; Anzai, Hidenobu
Author_Institution :
Boston University
fYear :
1994
fDate :
24-29 July 1994
Firstpage :
177
Lastpage :
177
Abstract :
Summary form only given. We report results of a systematic inagnetoresistance study of the quasi-two dimensional (Q2D) organic conductor /spl alpha/-(BEDT-TTF)/sub 2/T1Hg(SCN)4 as a function of angle in fields up to 30 tesla. The high field phase transition, or kink field present in this material and characterized by a sudden drop in magnetoresistance, is mapped out as a function of /spl phi/ defined to be the angle between the magnetic field and the normal to the highly conducting Q2D planes. This transition occurring at 25 tesla for /spl phi/ = 0, is observable for angles /spl phi/ < 65, above which it either does not exist or is above field range. These results are further elucidated through fixed field angle sweeps. In this case angular magnetoresistance oscillations (AMRO) characterized by sharp minima appear below the transition, while Yamaji type oscillations appear above. The transition between these two effects clearly identifies the H-/spl phi/ kink field boundary. Additional features such as Shubnikov-de Haas (SdH) oscillations and the magnetoresistance maximum (Hmax) are mapped as a function of angle. The origin of these angular dependent magnetoresistance features is discussed based upon current Fermi surface models for the /spl alpha/-(BEDT TTF)2MH9(SCN)4 (M = K, Rb, TI) family.
Keywords :
Conducting materials; Conductivity; Conductors; Electrons; Glass; Magnetic materials; Magnetic semiconductors; Magnetoresistance; Paramagnetic resonance; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location :
Seoul, Korea
Type :
conf
DOI :
10.1109/STSM.1994.834970
Filename :
834970
Link To Document :
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