Title :
Reduction of short channel effects in self-aligned AlInAs/GaInAs HEMTs by lateral bandgap engineering for high fmax
Author :
Chavarkar, P. ; Migliore, E. ; Yen, J. ; Fischetti, M.V. ; Laux, S.E. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Advances in materials and processing technology have made possible the fabrication of HEMTs with fτ as high as 340 GHz (f max=250 GHz). However it is difficult to simultaneously obtain a high fτ and fmax. This is because a high fτ requires a self-aligned FET structure. However the reduced source-drain separation results in short channel effects like drain induced barrier lowering and high output conductance. Also the gate-drain capacitance Cgd is increased. This reduces the fmax of the device. In this abstract we present a novel lateral bandgap engineering technique which reduces the short channel effects in a self-aligned HEMT and makes it possible to achieve a fmax in a high fτ FET structure
Keywords :
III-V semiconductors; aluminium compounds; capacitance; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device models; 250 GHz; 2D Monte Carlo/Poisson device simulator; 340 GHz; AlInAs-GaInAs; DAMOCLES; channel electron velocity; drain induced barrier lowering; gate-drain capacitance; gate-drain depletion region; high bandgap AlInAs source; hot electron launcher; lateral bandgap engineering; low bandgap InAs drain; output conductance; potential profiles simulation; self-aligned AlInAs/GaInAs HEMTs; self-aligned FET structure; short channel effects reduction; source-drain separation; Aluminum compounds;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649379
