Title :
A low-noise frequency synthesizer for infrastructure applications
Author :
Farahvash, S. ; Roberts, Gordon ; Easter, J. ; Wei, Rihua ; Stegmeir, D. ; Li Jin
Author_Institution :
RFMD, San Jose, CA, USA
Abstract :
A 2.2 GHz fully integrated SiGe-BiCMOS frequency synthesizer embedding a low-noise VCO and targetting infrastructure applications is presented. A differential Colpitts VCO forms the core of the synthesizer. An initial open-loop calibration which stores the center frequencies of all VCO sub-bands in a RAM obviates the need for incremental calibration. The synthesizer has multiple out-of-loop dividers to synthesize frequencies less than the VCO frequency.
Keywords :
Ge-Si alloys; frequency synthesizers; voltage-controlled oscillators; BiCMOS frequency synthesizer; VCO frequency; complementary metal-oxide-semiconductor; differential Colpitts VCO; frequency 2.2 GHz; low noise VCO; low noise frequency synthesizer; open loop calibration; out-of-loop dividers; voltage-controlled oscillators; Charge pumps; FETs; Frequency conversion; Frequency measurement; Frequency synthesizers; Phase noise; Switches; Tuning; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6033-5
DOI :
10.1109/ISSCC.2010.5433944
