Title :
FETs on lattice-mismatched substrates: GaAs/InP and GaAs-AlGaAs/Si
Author :
Ren, F. ; Hobson, W.S. ; Pearton, S.J. ; Chand, N. ; Chen, Y.K. ; Tennant, D.M. ; Resnick, D.J.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
High-performance 0.9- mu m-gate-length GaAs MESFETs on InP substrates and 1- mu m-gate-length GaAs-AlGaAs SDHTs on Si substrates are reported. The GaAs-on-InP MESFET structures exhibited extrinsic transconductances of 377 mS/mm at a gate bias of 0.6 V. The drain I-V characteristic showed excellent saturation, and the devices exhibited no light sensitivity of the DC characteristics. A unity current gain cutoff frequency of 22 GHz and a maximum frequency of oscillation of 30 GHz were measured. For the SDHTs on Si, the maximum transconductance was 220 mS/mm at 300 K and 364 mS/mm at 77 K. A minimum propagation delay of 28 ps/stage at room temperature was obtained for a 19-stage direct coupled FET logic ring oscillator with a power dissipation of 1.1 mW/stage. Microwave performance (f/sub T/=15 GHz, f/sub max/=22 GHz) comparable to that of homoepitaxial devices was obtained.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated logic circuits; oscillators; semiconductor epitaxial layers; silicon; solid-state microwave devices; substrates; 0.9 micron; 1.0 micron; 1.1 mW; 15 to 30 GHz; 28 ps; 300 K; 6 V; 77 K; AlGaAs-GaAs-Si; DCFL; GaAs-InP; HEMTs; InP substrates; MESFETs; SDHTs; Si substrates; cutoff frequency; direct coupled FET logic; drain I-V characteristic; extrinsic transconductances; gate bias; lattice-mismatched substrates; maximum frequency of oscillation; microwave performance; power dissipation; propagation delay; ring oscillator; room temperature; semiconductors; Current measurement; Cutoff frequency; FETs; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Indium phosphide; MESFETs; MODFETs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69312
