Title :
Fabrication technology for wafer through-hole interconnections and three-dimensional stacks of chips and wafers
Author :
Linder, S. ; Baltes, H. ; Gnaedinger, E. ; Doering, E.
Author_Institution :
Lab. fur Phys. Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
This paper presents an approach to build electronic systems with very high chip count. Instead of packing the chips laterally as it is done in multichip-modules (MCMs), individual dies, blocks of dies and ultimately entire wafers are stacked on top of each other. Electrical interconnection is accomplished using plated through-hole contacts through the silicon substrate. Proper thermal management is obtained using dedicated heat distribution contacts, which can be fabricated by a judiciously designed mask layout and without additional processing effort. Thermally induced stress in the interconnections between the stacked layers is limited both by means of design and process variations
Keywords :
packaging; Si; Si substrate; chips; dedicated heat distribution contacts; electrical interconnection; mask layout; plated through-hole contacts; reliability; stacked layers; thermal management; thermally induced stress; three-dimensional stacks; wafer through-hole interconnections; wafers; Anisotropic magnetoresistance; Contacts; Etching; Fabrication; Gold; Integrated circuit interconnections; Packaging; Silicon; Thermal management; Thermal stresses;
Conference_Titel :
Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
Conference_Location :
Oiso
Print_ISBN :
0-7803-1833-1
DOI :
10.1109/MEMSYS.1994.556165