• DocumentCode
    1887120
  • Title

    Fabrication technology for wafer through-hole interconnections and three-dimensional stacks of chips and wafers

  • Author

    Linder, S. ; Baltes, H. ; Gnaedinger, E. ; Doering, E.

  • Author_Institution
    Lab. fur Phys. Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    349
  • Lastpage
    354
  • Abstract
    This paper presents an approach to build electronic systems with very high chip count. Instead of packing the chips laterally as it is done in multichip-modules (MCMs), individual dies, blocks of dies and ultimately entire wafers are stacked on top of each other. Electrical interconnection is accomplished using plated through-hole contacts through the silicon substrate. Proper thermal management is obtained using dedicated heat distribution contacts, which can be fabricated by a judiciously designed mask layout and without additional processing effort. Thermally induced stress in the interconnections between the stacked layers is limited both by means of design and process variations
  • Keywords
    packaging; Si; Si substrate; chips; dedicated heat distribution contacts; electrical interconnection; mask layout; plated through-hole contacts; reliability; stacked layers; thermal management; thermally induced stress; three-dimensional stacks; wafer through-hole interconnections; wafers; Anisotropic magnetoresistance; Contacts; Etching; Fabrication; Gold; Integrated circuit interconnections; Packaging; Silicon; Thermal management; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
  • Conference_Location
    Oiso
  • Print_ISBN
    0-7803-1833-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1994.556165
  • Filename
    556165