DocumentCode
1887120
Title
Fabrication technology for wafer through-hole interconnections and three-dimensional stacks of chips and wafers
Author
Linder, S. ; Baltes, H. ; Gnaedinger, E. ; Doering, E.
Author_Institution
Lab. fur Phys. Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear
1994
fDate
1994
Firstpage
349
Lastpage
354
Abstract
This paper presents an approach to build electronic systems with very high chip count. Instead of packing the chips laterally as it is done in multichip-modules (MCMs), individual dies, blocks of dies and ultimately entire wafers are stacked on top of each other. Electrical interconnection is accomplished using plated through-hole contacts through the silicon substrate. Proper thermal management is obtained using dedicated heat distribution contacts, which can be fabricated by a judiciously designed mask layout and without additional processing effort. Thermally induced stress in the interconnections between the stacked layers is limited both by means of design and process variations
Keywords
packaging; Si; Si substrate; chips; dedicated heat distribution contacts; electrical interconnection; mask layout; plated through-hole contacts; reliability; stacked layers; thermal management; thermally induced stress; three-dimensional stacks; wafer through-hole interconnections; wafers; Anisotropic magnetoresistance; Contacts; Etching; Fabrication; Gold; Integrated circuit interconnections; Packaging; Silicon; Thermal management; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
Conference_Location
Oiso
Print_ISBN
0-7803-1833-1
Type
conf
DOI
10.1109/MEMSYS.1994.556165
Filename
556165
Link To Document