Author :
Takashima, D. ; Shiga, H. ; Hashimoto, Dieter ; Miyakawa, Takayuki ; Shiratake, S. ; Hoya, K. ; Ogiwara, R. ; Takizawa, R. ; Doumae, S. ; Fukuda, Reo ; Watanabe, Yoshihiro ; Fujii, Shohei ; Ozaki, Takashi ; Kanaya, Haruichi ; Shuto, S. ; Yamakawa, Kiyoshi
Abstract :
A ferroelectric capacitor overdrive with shield-bitline drive for 1.3 V chain FeRAM has been verified using a 0.13 ¿m 576 Kb test chip with 0.719 ¿m2 cell. This technique applies 0.24 V bias to ferroelectric capacitors without increasing stress and bitline capacitance. The measured tail-to-tail cell signal is improved by 100 mV and doubled in 1.3 V array operation.
Keywords :
ferroelectric capacitors; random-access storage; FeRAM; ferroelectric capacitor overdrive; scalable shield-bitline-overdrive technique; shield-bitline drive; size 0.13 mum; tail-to-tail cell signal; voltage 0.24 V; voltage 1.3 V; voltage 100 mV; Capacitance; Capacitors; Degradation; Drives; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Testing; Voltage;
