DocumentCode :
1887274
Title :
Millimeterwave characteristics of flip-chip interconnects for multi-chip modules
Author :
Heinrich, W. ; Jentzsch, A. ; Baumann, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume :
2
fYear :
1998
fDate :
7-12 June 1998
Firstpage :
1083
Abstract :
Electromagnetic simulations and measurement data of flip-chip transitions are presented. First-order effects are identified and design criteria for mm-wave multi-chip interconnects are derived. In coplanar environment, the flip-chip scheme provides interconnects with excellent low-reflective properties. For conductor-backed structures, the suppression of parasitic modes represents the key issue.
Keywords :
coplanar waveguides; flip-chip devices; integrated circuit interconnections; millimetre wave integrated circuits; multichip modules; conductor-backed structures; coplanar environment; design criteria; electromagnetic simulations; first-order effects; flip-chip interconnects; low-reflective properties; millimeterwave characteristics; multi-chip modules; parasitic modes; Coplanar waveguides; Design engineering; Electromagnetic measurements; Electromagnetic modeling; Electromagnetic reflection; Finite difference methods; Frequency; Gallium arsenide; Guidelines; Packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-4471-5
Type :
conf
DOI :
10.1109/MWSYM.1998.705181
Filename :
705181
Link To Document :
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